journal article·1997-08

Hole trapping in flash EEPROM gate oxide and damages induced by gate to source erasing

P. Candelier, F. Mondon, B. Guillaumot, G. Reimbold, F. Martin

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Integrated Circuits and Semiconductor Failure Analysis

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References (11)

Show source-provided references
1. Haddad · IEEE Electron Dev. Lett. · 1990 · 11 · 51410.1109/55.63017 ↗
2. San · IEEE Trans. Electron Dev. · 1995 · 42 · 15010.1109/16.370023 ↗
3. Dunn · 1994 · 299
4. Huang · 1995 · 61
5. Guillaumot · 1995 · 4.1
6. Huang · 1995 · 3.3
7. Chen · 1995 · 331
8. Yamada · 1993 · 23
9. Meinertzhagen · J. Appl. Phys. · 1996 · 79 · 254910.1063/1.361121 ↗
10. San · IEEE Electron Dev. Lett. · 1992 · 13 · 43910.1109/55.192784 ↗
11. Bez · 1990 · 99