journal article·1999-04

Electrical properties of oxynitride thin films using noise and charge pumping measurements

P Masson, P Morfouli, J.L Autran, J Brini, B Balland, E.M Vogel, J.J Wortman

Journal of Non-Crystalline Solids· Volume 245· Issue 1-3
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Ferroelectric and Negative Capacitance Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (10)

Show source-provided references
1. W.L. Hill, E.M. Vogel, V. Misra et al., IEEE Trans. Electron Devices 43 (1996) 1510.1109/16.477588 ↗
2. E.M. Vogel, J.J. Wortman, P.K. McLarty, V.H.C. Watt, B. Kirkpatrick, 191st Electrochemical Society Meeting, Montreal Canada, (1997)
3. P.K. McLarty, S. Cristoloveanu, O. Faynot, V. Mistra, J.R. Hauser, J.J. Wortman, Solid-State Electron. 38, 1175 (1995)10.1016/0038-1101(94)00248-E ↗
4. G. Ghibaudo, O. Roux, C. Nguyen-Duc, F. Balestra, J. Brini, Phys. Stat. Sol. A 124 (1991) 57110.1002/pssa.2211240225 ↗
5. P. Masson, G. Ghibaudo, J.L. Autran, P. Morfouli, J. Brini, IEE Electron. Lett. (1998) accepted for publication
6. G. Groeseneken, H.E. Maes, N. Beltran, R.F. De Keersmaecker, IEEE Trans. Electron Devices 31 (1984) 4210.1109/T-ED.1984.21472 ↗
7. J.L. Autran, C. Chabrerie, Solid-State Electron. 39 (1996) 139410.1016/0038-1101(96)00039-1 ↗
8. J.L. Autran, B. Balland, Rev. Sci. Instrum. 65 (1994) 214110.1063/1.1144713 ↗
9. A.T. Wu, T.Y. Chan, V. Murali, S.W. Lee, J. Nulmand, M. Garner, IEDM Tech. Dig., (1989) 27110.1109/IEDM.1989.74277 ↗
10. M. Severi, L. Dori, M. Impronta, S. Guerri, IEEE Trans. Electron Devices 36 (1989) 244710.1109/16.43665 ↗