Localized states of a-GaP:N by nitrogen ion beam assisted deposition
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Abstract
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Research context
OpenAlex topics: Semiconductor materials and devices · Thin-Film Transistor Technologies · Ion-surface interactions and analysis
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References (9)
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1. Kumabe · Jpn. J. Appl. Phys. · 1980 · 19 · 11910.7567/JJAPS.19S2.119 ↗
2. Onuki · Jpn. J. Appl. Phys. · 1987 · 26 · 140410.1143/JJAP.26.1404 ↗
3. Kubota · Solar Energy Mater. Solar Cells · 1994 · 35 · 35310.1016/0927-0248(94)90162-7 ↗
4. Onuki · J. Non-Cryst. Solids · 1987 · 97&98 · 134710.1016/0022-3093(87)90323-1 ↗
5. Kubota · J. Non-Cryst. Solids · 1989 · 115 · 3910.1016/0022-3093(89)90353-0 ↗
6. Oheda · Solid State Commun. · 1980 · 33 · 20310.1016/0038-1098(80)90354-3 ↗
7. Ac-photoconductivity of Amorphous Gallium Phosohide (a-GaP) Formed by Nitrogen Ion Beam Assisted Deposition
8. T. Fujiyoshi and H. Kubota, to be published in Jpn. J. Appl. Phys.
9. S. Nonomura and H. Kubota, submitted for publication.