Rapid relaxation and electronic properties of a-Si:H

We analyze the impact of trapped carrier relaxation on the determination of the microscopic electronic mobility of a-Si:H. The calculations show that, if there is relaxation, the mobility is substantially higher than that predicted by the standard multiple trapping picture. This model therefore explains the absence of room temperature geminate recombination (GR) in a-Si:H, and is consistent with both time-of-flight (TOF) and photoluminescence (PL) experiments. That is, we may understand three experimental results which have long appeared to be contradictory, in the framework of a single, simple model.