journal article·1996-05

Characteristics of a-Si:H films prepared by a novel laminar flow photo-chemical vapor deposition method

Tetsuya Yamaguchi, Yoshinori Iida, Akihiko Furukawa, Yoshiki Ishizuka, Hidetoshi Nozaki, Sohei Manabe, Hiroyuki Tango, Okio Yoshida

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies

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References (7)

Show source-provided references
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4. Fang · J. Non-Cryst. Solids · 1980 · 35&36 · 25510.1016/0022-3093(80)90603-1 ↗
5. Gardona · Phys. Status Solidi (b) · 1983 · 118 · 46310.1002/pssb.2221180202 ↗
6. Austin · J. Phys. Chem. · 1976 · 80 · 281110.1021/j100567a001 ↗
7. Perrin · Appl. Phys. Lett. · 1987 · 50 · 43310.1063/1.98165 ↗