journal article·1989-12

Bond angle distortions and hydrogenation at the Si/a-SiN:H interface

Etienne Bustarret

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Semiconductor materials and interfaces · Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (13)

Show source-provided references
1. Abeles · Phys. Rev. Lett. · 1983 · 51 · 200310.1103/PhysRevLett.51.2003 ↗
2. Sette · J. Non Cryst. Sol. · 1987 · 97&98 · 985
3. Abelson · Appl. Phys. Lett. · 1986 · 49 · 85010.1063/1.97514 ↗
4. Abeles · J. Non Cryst. Sol. · 1985 · 77&78 · 106510.1016/0022-3093(85)90841-5 ↗
5. Collins · 1986 · 70 · 361
6. Street · Appl. Phys. Lett. · 1984 · 45 · 76910.1063/1.95398 ↗
7. Keating · Phys. Rev. · 1966 · 145 · 63710.1103/PhysRev.145.637 ↗
8. Bustarret · 1988 · 118 · 123
9. Bustarret · Phys. Rev. · 1988 · B38 · 817110.1103/PhysRevB.38.8171 ↗
10. Hasegawa · Phil. Mag. · 1989 · B59 · 36510.1080/13642818908220184 ↗
11. Maley · Phys. Rev. · 1985 · B31 · 557710.1103/PhysRevB.31.5577 ↗
12. Roxlo · J. Vac. Sci. Technol. · 1986 · B4 · 143010.1116/1.583469 ↗
13. M. C. Habrard, M. Bensouda, J.C. Bruyère and D. Jousse, this volume.