journal article·1995-07

Structural and optical properties of nitrided silicon oxide layers rapid thermally grown in a pure N2O ambient

E. Hartmannsgruber, U. Rossow, A. Hoyer, P. Lange

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Semiconductor materials and devices · GaN-based semiconductor devices and materials · Thin-Film Transistor Technologies

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References (19)

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