journal article·1996-05

Improved quality of high deposition rate a-Si:H films prepared at usual substrate temperature

B. Alhallani, R. Tews, G. Suchaneck, S. Röhlecke, A. Kottwitz, K. Schade

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Plasma Diagnostics and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (15)

Show source-provided references
1. Böhm · J. Appl. Phys. · 1993 · 73 · 257810.1063/1.353070 ↗
2. Hudgens · 1985 · 249 · 403
3. Kato · J. Non-Cryst. Solids · 1985 · 77&78 · 81310.1016/0022-3093(85)90784-7 ↗
4. Amorphous Silicon Technology
5. Ganguly · J. Non-Cryst. Solids · 1993 · 137&138 · 3110.1016/0022-3093(93)90485-G ↗
6. Röhlecke · Surf. and Coatings Technol. · 1995 · 74&75 · 25910.1016/0257-8972(95)08234-4 ↗
7. Langford · Phys. Rev. · 1992 · B45 · 133367
8. Bhattacharya · Appl. Phys. Lett. · 1988 · 52 · 158710.1063/1.99089 ↗
9. Kline · Crit. Rev. Solid State Mater. Sci. · 1989 · 16 · 110.1080/10408438908244626 ↗
10. Tews · 1994
11. Kushner · J. Appl. Phys. · 1988 · 63 · 253210.1063/1.340989 ↗
12. Hirschfelder · 1954 · 523
13. Alhallani · 1994
14. Hishikawa · J. Appl. Phys. · 1993 · 79 · 422710.1063/1.352828 ↗
15. Winer · Phys. Rev. · 1990 · B41 · 1215010.1103/PhysRevB.41.12150 ↗