journal article·1998-05

Kinetics of defect formation by illumination at temperature higher than 200°C in hydrogenated amorphous silicon

M. Meaudre, R. Meaudre

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence

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References (10)

Show source-provided references
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5. Caputo · Mater. Res. Soc. Symp. Proc. · 1994 · 336 · 16510.1557/PROC-336-165 ↗
6. Meaudre · Philos. Mag. Lett. · 1993 · 68 · 15910.1080/09500839308240958 ↗
7. Meaudre · Phys. Rev. B · 1994 · 49 · 171610.1103/PhysRevB.49.1716 ↗
8. Graeff · Appl. Phys. Lett. · 1993 · 62 · 300110.1063/1.109170 ↗
9. D. Redfield, R.H. Bube, in: H. Ahmed, M. Pepper, A. Broers (Eds.), Photoinduced Defects in Semiconductors, Cambridge Univ. Press, 1996.10.1017/CBO9780511622533 ↗
10. Stutzmann · Phys. Rev. B · 1994 · 50 · 1159210.1103/PhysRevB.50.11592 ↗