journal article·1985-12

Vibrational and electronic properties of hydrogenated amorphous silicon with dangling bonds

J.S. Nelson, C.Y. Fong, L. Guttman, I.P. Batra

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · High-pressure geophysics and materials · Chemical and Physical Properties of Materials

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References (8)

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1. Papaconstantopoulos · Phys. Rev. · 1981 · B24 · 723310.1103/PhysRevB.24.7233 ↗
2. Barrio · J. Non-cryst. Solids · 1983 · 59 and 60 · 17710.1016/0022-3093(83)90550-1 ↗
3. Chin · Phys. Rev. · 1980 · B21 · 237810.1103/PhysRevB.21.2378 ↗
4. Allen · Phys. Rev. · 1982 · B25 · 106510.1103/PhysRevB.25.1065 ↗
5. Guttman · Phys. Rev. · 1981 · B23 · 186610.1103/PhysRevB.23.1866 ↗
6. Ross · J. Non-cryst. Solids · 1983 · 59 and 60 · 20910.1016/0022-3093(83)90558-6 ↗
7. Guttman · Phys. Rev. · 1982 · B26 · 675610.1103/PhysRevB.26.6756 ↗
8. von Roedern · Phil. Mag. · 1979 · B40 · 43310.1080/01418637908226768 ↗