Simulations of generation–recombination noise of n–i–n a-Si:H devices using AMPS-1D

Abstract AMPS-1D is an accepted computer program to simulate time-averaged electrical properties of a-Si:H devices. In this paper, AMPS-1D is applied to calculate resistance fluctuations produced by generation–recombination (g–r) processes at defects in 1.56-μm thick n–i–n devices. The results are compared to measured noise data. Calculated differential g–r rates appear to coincide with the observed characteristic noise frequencies for all temperatures, when taken at 0.35 μm from the contact and correspond to the calculated inverse electron lifetimes. The position-dependent g–r rate explains why a distribution of rates is observed in the noise spectra in a-Si:H.