Effect of hole accumulation on photodegradation in a-Si:H
Source abstract
Abstract
An effect of hole accumulation during band gap illumination on degradation is examined in hydrogenated amorphous silicon (rf glow-discharge). It is found that accumulation of holes is more efficient than that of electrons in causing photodegradation, similar to the carrier-induced metastability. We suggest that the self-trapping of holes (STH), which weakens covalent bonds, could affect degradation and the number of STH could increase under hole accumulation.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Phase-change materials and chalcogenides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (7)
Show source-provided references
1. R.A. Street, Hydrogenated Amorphous Silicon, Cambridge University, Cambridge, 1991, p. 16910.1017/CBO9780511525247 ↗
2. W. Kruehler, H. Pfleiderer, R. Plattner, W. Stetter, AIP Conf. Proc. 120 (1984) 31110.1063/1.34757 ↗
3. Staebler · Appl. Phys. Lett. · 1977 · 31 · 29210.1063/1.89674 ↗
4. Stutzmann · Phys. Rev. B · 1985 · 32 · 2310.1103/PhysRevB.32.23 ↗
5. Morigaki · Jpn. J. Appl. Phys. · 1988 · 27 · 16310.1143/JJAP.27.163 ↗
6. K. Morigaki, Physics of Amorphous Semiconductors, Imperial College Press and World Scientific Press, Singapore, 1999, p. 23110.1142/9789812817556 ↗
7. Shimakawa · Adv. Phys. · 1995 · 44 · 47510.1080/00018739500101576 ↗