Enlargement of on/off current ratio in poly-silicon TFT by selective crystallization method
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Abstract
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence
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References (9)
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1. Poly-Si TFT devices and their application to LCDs
2. Polysilicon TFT circuit design and performance10.1109/4.173113 ↗
3. Characterization of polycrystalline silicon MOS transistors and its film properties10.1143/JJAP.21.1472 ↗
4. Anomalous leakage current in LPCVD polysilicon MOSFET's10.1109/T-ED.1985.22212 ↗
5. Effects of grain boundary passivation on the characteristics of p-channel MOSFET's in LPCVD polysilicon10.1049/el:19830674 ↗
6. Hydrogen passivation of polysilicon MOSFET's from a plasma nitride source10.1109/EDL.1984.25991 ↗
7. Characteristics of offset structure polycrystalline silicon thin-film transistors10.1109/55.20401 ↗
8. Characteristics of field induced drain poly-Si TFT's with high ON/OFF current ratio10.1109/16.127483 ↗
9. XeCl excimer laser annealing used to fabricate poly-Si TFT's