Crystallization of a-Si:H with cw and pulsed lasers
Source abstract
Abstract
Results of crystallization of a-Si:H with a cw argon-ion laser (ħθ = 2.41 eV) and a pulsed Nd:YAG laser (ħθ = 1.17 eV, 100-ps pulses, 103 to 104 pulses) are presented. The properties of the films suggest that the mechanisms are different and in particular that pulsed crystallization is a nonthermal process.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Ion-surface interactions and analysis
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References (5)
Show source-provided references
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