Light emitting wide band gap a-Si:H deposited by microwave electron cyclotron resonance plasma-enhanced chemical vapour deposition

Abstract We investigate hydrogenated amorphous silicon (a-Si:H) from the point of view of light emitting applications. Thin films of wide band gap a-Si:H were prepared from silane SiH 4 diluted with He by using the microwave electron cyclotron resonance plasma enhanced chemical vapour deposition. Room temperature photoluminescence (PL) and mainly electroluminescence (EL) of p + –i–n + (p + –p–n–n + ) structures were studied. The PL and EL emission spectra are in the red/near-infrared region. EL, occuring in fact in recrystallised parts of the devices (the crystallisation arising as a result of the application of an external bias), has hysteresis and the EL devices evoke the a-Si:H memory switches.