Fabrication of a-Si:H/nc-Si multilayer films using layer by layer technique and their properties

Abstract Multilayered a-Si:H/nc-Si films were deposited using intermediate annealing in a hydrogen plasma of the successively grown thin a-Si:H layers. Results of transmission electron microscopy studies testify that the films have a layered structure with alternations of pure a-Si:H layers and layers of a-Si:H containing nanocrystallites of 4.5 nm average diameter with a volume fraction less than 1%, which were formed during intermediate annealing. The obtained films have increased photosensitivity ( σ ph / σ d ) and stability in comparison to standard a-Si:H obtained at continuous growth. An interesting distinctive feature of the multilayered films is the presence of two maxima in photoconductivity (PC) spectra.