journal article·1984-07

Transport properties of a-Si:H prepared by r.f. and d.c. glow discharge

M. Morgan, F. Jansen, S. Grammatica, D. Kuhman, J. Mort

Journal of Non-Crystalline Solids· Volume 66· Issue 1-2
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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Semiconductor materials and devices

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References (6)

Show source-provided references
1. Mort · Physics in Technology · 1980 · 11 · 13410.1088/0305-4624/11/4/I02 ↗
2. Plasma deposition of inorganic thin films
3. Spear · Adv. Physics · 1977 · 26 · 81110.1080/00018737700101463 ↗
4. Knights · Appl. Phys. Lett. · 1981 · 38 · 33110.1063/1.92359 ↗
5. W.E. Spear and H.L. Steemers, The investigation of excess carrier lifetimes in amorphous silicon by transient methods, this volume.
6. F. Jansen, J. Mort, S. Grammatica, M. Morgan, and I. Chen, Hole range in compensated a-Si:H, this volume.