journal article·1988-01

Theoretical investigation of the dangling bond defects in hydrogenated amorphous silicon (a-Si:H) by the self-consistent-field X-alpha scattered-wave cluster molecular-orbital method

C.F. Lo, K.H. Johnson, D. Adler

Journal of Non-Crystalline Solids· Volume 99· Issue 1
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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Glass properties and applications · Silicon Nanostructures and Photoluminescence

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References (20)

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