Influence of the defect concentration on the recombination in electron bombarded a-Si:Ge:H alloys studied by photoluminescence and electron spin resonance
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OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Advanced Semiconductor Detectors and Materials
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References (10)
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1. Street · Phys. Rev. B · 1978 · 18 · 188010.1103/PhysRevB.18.1880 ↗
2. Street · Phil. Mag. B · 1987 · 56 · 28910.1080/13642818708221318 ↗
3. Carius · J. Non-Cryst. Solids · 1987 · 97&98 · 106710.1016/0022-3093(87)90256-0 ↗
4. Finger · J. Non-Cryst. Solids · 1985 · 77&78 · 73110.1016/0022-3093(85)90762-8 ↗
5. Finger · J. Non-Cryst. Solids · 1987 · 97&98 · 101510.1016/0022-3093(87)90244-4 ↗
6. Ristein · Solid State Comm. · 1988 · 67 · 21110.1016/0038-1098(88)90602-3 ↗
7. Siebert · phys. stat. sol.(b) · 1987 · 140 · 31110.1002/pssb.2221400132 ↗
8. M. Bort, R. Carius and W. Fuhs, this conference.
9. Tsang · Phil. Mag. B · 1978 · 37 · 60110.1080/01418637808226454 ↗
10. Street · Advances in Physics · 1981 · 30 · 59310.1080/00018738100101417 ↗