Dynamic properties of ultraviolet sensitive detectors

Abstract The dynamic properties of ultraviolet detectors, the spectral sensitivity of which can be adjusted from a wide UV to a selective UV-B range by applying a semi-transparent Ag front contact, were studied. The investigations of ultra thin n–i–p layer sequences based on hydrogenated amorphous silicon and its alloys is of growing interest since ultra thin diodes are also attractive for applications in the field of interferometric sensors and spectrometers. Besides the steady state behavior of the detector also the dynamic properties are of interest for a precise optimization of the read-out process. The small-signal frequency response of thin diodes with an i-layer thickness down to 35 nm were studied in comparison with thicker diodes by measuring and analyzing the admittance of the devices under different bias conditions.