journal article·1991

Interface properties of a-Si:H/Si3N4+x and a-Si:H/SiO2 elucidated by plas and its improvement by the atomic hydrogen

S. Nitta, H. Miyazima, M. Mukai, S. Nonomura, S.Q. Gu, P.C. Taylor

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Thermography and Photoacoustic Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (12)

Show source-provided references
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5. Coufal · Appl. Phys. Lett. · 1984 · 45 · 51610.1063/1.95298 ↗
6. Mandelis · Phys. Rev. · 1989 · B39 · 525410.1103/PhysRevB.39.5254 ↗
7. Fan · 1991
8. Ranganathan · J. Non-Cryst. Solids · 1987 · 97&98 · 70710.1016/0022-3093(87)90167-0 ↗
9. Ranganathan · 1989 · Vol. 1 · 461
10. Gu · 1991
11. Gu · 1991 · 843
12. Nitta · 1989 · 2 · 83