Electroluminescence and forward bias currents in amorphous silicon p-i-n diodes: the effect of steady state bias and large i-layer thickness
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Abstract
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies
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References (8)
Show source-provided references
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8. Han · J. Non-Crystal. Solids · 1991 · 137&138 · 26710.1016/S0022-3093(05)80107-3 ↗