journal article·1991

The role of dangling bond states in the picosecond recovery of photoinduced absorption in a-Si:H

A. Esser, H. Heesel, H. Kurz, C. Wang, M.J. Williams, G. Lucovsky

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence

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References (7)

Show source-provided references
1. Esser · Phys. Rev. · 1990 · B41 · 287910.1103/PhysRevB.41.2879 ↗
2. Hattori · Phil. Mag. · 1988 · B75 · 1310.1080/13642818808205720 ↗
3. Parsons · Appl. Phys. Lett. · 1990 · 56 · 189510.1063/1.103056 ↗
4. Valdmanis · IEEE J. of Quantum Electronics · 1986 · QE-22 · 122
5. Strait · Appl. Phys. Lett. · 1985 · 47 · 58910.1063/1.96081 ↗
6. Hangleiter · Phys. Rev. · 1988 · B37 · 259410.1103/PhysRevB.37.2594 ↗
7. Stutzmann · Phys. Rev. · 1985 · B32 · 2310.1103/PhysRevB.32.23 ↗