journal article·1989-12

Differences in the electrical properties of the interfaces of PECVD silicon nitride with amorphous and crystalline silicon

M.C. Habrard, M. Bensouda, J.C. Bruyere, D. Jousse

Journal of Non-Crystalline Solids· Volume 115· Issue 1-3
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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Semiconductor materials and devices · Thin-Film Transistor Technologies · Advancements in Semiconductor Devices and Circuit Design

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References (9)

Show source-provided references
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2. Jousse · Appl. Phys. Lett. · 1988 · 52 · 44510.1063/1.99438 ↗
3. Thompson · 1986 · 70 · 613
4. Kanicki · Appl. Phys. Lett. · 1989 · 54 · 73310.1063/1.100876 ↗
5. Street · Philos. Mag. B · 1985 · 51 · 110.1080/01418618508242762 ↗
6. Kanicki · IEEE Electron. Dev. Lett. · 1989 · 10 · 27710.1109/55.31745 ↗
7. Yokoyama · Jap. J. Appl. Phys. · 1981 · 20 · L11710.1143/JJAP.20.L117 ↗
8. Jousse · Appl. Phys. Lett. · 1989 · 54 · 104310.1063/1.101558 ↗
9. D.Jousse, J. Kanicki, Appl. Phys. Lett., in print.