The influence of quantum effects on the determination of gate oxide thickness from C-V measurements
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OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor materials and devices · Silicon and Solar Cell Technologies
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References (13)
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1. Stern · CRC Crit. Rev. Solid State Sci. · 1974 · 499
2. Rios · IEDM-94 Tech. Dig. Dec. · 1994 · 613
3. Hantsch · Solid State Electron. · 1989 · 32 · 83910.1016/0038-1101(89)90060-9 ↗
4. Hu · Appl. Phys. Lett. · 1995 · 66 · 163810.1063/1.113877 ↗
5. Klausmann · 1989 · Vol. 2
6. Yaron · Solid State Electron. · 1980 · 23 · 43310.1016/0038-1101(80)90078-7 ↗
7. Nagai · Solid State Electron. · 1985 · 28 · 37110.1016/0038-1101(85)90066-8 ↗
8. Habas · Solid State Electron. · 1990 · 33 · 153910.1016/0038-1101(90)90134-Z ↗
9. Habas · IEEE Trans. Electron Devices · 1992 · 39 · 149610.1109/16.137331 ↗
10. Deal · J. Electrochem. Soc. · 1965 · 112
11. MOSFET Models for VLSI Circuit Simulations
12. Lin · IEEE Electron Devices Lett. · 1994 · 15 · 5110.1109/55.285376 ↗
13. Nicollian · 1982