journal article·1993-12

Interface state density of SiNX:H/c-Si MIS structure

Keiji Maeda, Toshihide Jinnai, Ikurou Umezu

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Semiconductor materials and interfaces

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (10)

Show source-provided references
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2. Lang · Phys. Rev. B · 1982 · 25 · 528510.1103/PhysRevB.25.5285 ↗
3. Jackson · Phys. Rev. B · 1982 · 25 · 555910.1103/PhysRevB.25.5559 ↗
4. Powell · IEEE Trans. Electron Devices · 1989 · 36 · 275310.1109/16.40933 ↗
5. Schroder · 1990
6. Nicollian · 1982
7. Maeda · Appl. Phys. Lett. · 1991 · 59 · 242110.1063/1.106035 ↗
8. Sze · 1981
9. Maeda · J. Appl. Phys. · 1991 · 70 · 274510.1063/1.350352 ↗
10. Maeda · 1993 · 297