journal article·1987-12

Annealing of weakly bound deuterium in a-Si:D,H

P.A. Fedders, V.P. Bork, D.J. Leopold, R.E. Norberg, J.B. Boyce, J.C. Knights

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Ion-surface interactions and analysis · Thin-Film Transistor Technologies · Semiconductor materials and devices

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References (3)

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1. Leopold · Phys. Rev. B · 1985 · 31 · 564210.1103/PhysRevB.31.5642 ↗
2. Leopold · Phys. Rev. B · 1982 · 26 · 605310.1103/PhysRevB.26.6053 ↗
3. Fedders · Phys. Rev. B · 1986 · 33 · 599410.1103/PhysRevB.33.5994 ↗