Effect of thermal annealing on dynamics of photoluminescence in a-GeSe2 films

Abstract We have investigated the effect of thermal annealing on dynamics of photoluminescence (PL) in vacuum-evaporated a-GeSe2 films with thickness of 15 μm. The intensity of PL increases over 200 times after annealing at 250°C, which makes it possible to take a first investigation on both decay time and fatigue effect. The disordered amorphous structure of the a-GeSe2 film, containing wrong bonds, Ge–Ge and Se–Se, has been reconstructed to a stable structure by diminishing the number of the wrong bonds and the related strain or internal pressure by thermal annealing.