Optical and electronic properties of microcrystalline silicon deposited by hot-wire chemical vapor deposition
Source abstract
Abstract
Abstract Microcrystalline silicon (μc-Si) films were deposited by hot-wire chemical vapor deposition (HWCVD) at ∼240°C with varied hydrogen dilution. Non-uniform growth was indicated by Raman and photoluminescence (PL) spectra using front- and back excitation. The electronic density of states was studied by optical absorption spectroscopy. An absorption peak at ∼1.25 eV appeared before any measurable crystallinity by Raman and PL. After the 520 cm −1 Raman mode appears, all the absorption spectra show a similar featureless lineshape. The broad photon emission spectra are consistent with the absorption curves.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies
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References (10)
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