journal article·1991

Individual electronic defect states in a-Si:H/a-SiNx:H double barrier structures

Thomas Teuschler, Martin Hundhausen, Lothar Ley

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Integrated Circuits and Semiconductor Failure Analysis · Thin-Film Transistor Technologies · Semiconductor materials and interfaces

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (7)

Show source-provided references
1. Arce · J. Non-Cryst. Solids · 1989 · 114 · 69610.1016/0022-3093(89)90693-5 ↗
2. Arce · 1989 · 675
3. Machlup · J. Appl. Phys. · 1954 · 25 · 34110.1063/1.1721637 ↗
4. Kirton · Adv. Phys. · 1989 · 38 · 36810.1080/00018738900101122 ↗
5. LeComber · J. Non-Cryst. Solids · 1985 · 77&78 · 137310.1016/0022-3093(85)90912-3 ↗
6. Lax · J. Appl. Phys. · 1977 · 48 · 391910.1063/1.324265 ↗
7. Henry · Phys. Rev. · 1977 · B15 · 98910.1103/PhysRevB.15.989 ↗