journal article·1993-12

Electronic and structural properties of the a-Si:H/a-SiNX:H interface

M.F Plass, J Ristein, L Ley

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (8)

Show source-provided references
1. Kärcher · Phys. Rev. B · 1984 · 30 · 189610.1103/PhysRevB.30.1896 ↗
2. Amorphous Heterostructures and Layer Structures
3. Coluzza · J. Non-Cryst. Solids · 1985 · 77&78 · 99910.1016/0022-3093(85)90829-4 ↗
4. Iqbal · J. Appl. Phys. · 1987 · 61 · 294710.1063/1.337842 ↗
5. Hayashi · Jpn. J. Appl. Phys. · 1988 · 27 · L31410.1143/JJAP.27.L314 ↗
6. Yang · Phys. Rev. B · 1989 · 39 · 380110.1103/PhysRevB.39.3801 ↗
7. Harrison · J. Vac. Sci. Technol. · 1977 · 14 · 101610.1116/1.569312 ↗
8. Sze · 1983