journal article·1993-12

Light-induced transient changes of the occupied density of defect states of a-Si:H

W. Graf, M. Wolf, K. Leihkamm, J. Ristein, L. Ley

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor materials and devices · Silicon and Solar Cell Technologies

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References (7)

Show source-provided references
1. Cohen · PRL · 1992 · 69 · 335810.1103/PhysRevLett.69.3358 ↗
2. D. Han and Y.Xiao, in Amorphous Silicon Technology-1993, edited by E.A. Schiff, M.J. Thompson, A. Madam, K. Tanaka (Mater. Res. Soc. Proc.) (to be published).
3. W. Graf, K. Leihkamm, J. Ristein, and L. Ley in Amorphous Silicon Technology-1993 edited by E.A. Schiff, M.J. Thompson, A. Madan, K. Tanaka (Mater. Res. Soc. Proc.)
4. Winer · Phys. Rev. B · 1988 · 38 · 768010.1103/PhysRevB.38.7680 ↗
5. Stutzmann · Phys. Rev. B · 1985 · 32 · 2310.1103/PhysRevB.32.23 ↗
6. Stutzmann · Phil. Mag. B · 1989 · 60 · 53110.1080/13642818908205926 ↗
7. H.M. Branz, E.A. Schiff (to be published).