Structural and electronic properties of doped a-Si1−xGex: H alloys grown with H-dilution
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OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence
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References (4)
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1. Optoelectronic properties and the gap state distribution in a-Si, Ge alloys
2. G. Krötz, J. Wind and G. Müller, Appl. Phys. A, in print.
3. Heterogeneities in a-SiGe:H alloys
4. Evangelisti · J. Non-Cryst. Solids · 1985 · 77 · 96910.1016/0022-3093(85)90823-3 ↗