Capacitance studies of deep defects in hydrogenated amorphous silicon
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Abstract
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OpenAlex topics: Thin-Film Transistor Technologies · Phase-change materials and chalcogenides · Silicon and Solar Cell Technologies
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References (15)
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1. Lang · Phys. Rev. · 1982 · B25 · 528510.1103/PhysRevB.25.5285 ↗
2. Cohen · Phys. Rev. Lett. · 1982 · 48 · 10910.1103/PhysRevLett.48.109 ↗
3. Lang · J. Non-Cryst. Solids · 1984 · 66 · 21710.1016/0022-3093(84)90323-5 ↗
4. Okushi · Phys. Rev. · 1982 · B25 · 431310.1103/PhysRevB.25.4313 ↗
5. Kocka · J. Non-Cryst. Solids · 1987 · 97&98 · 71510.1016/0022-3093(87)90169-4 ↗
6. Gelatos · Appl. Phys. Lett. · 1986 · 49 · 72210.1063/1.97579 ↗
7. Amer · 1984 · vol. 21B · 83
8. Vardeny · Phys. Rev. Lett. · 1985 · 54 · 184410.1103/PhysRevLett.54.1844 ↗
9. Michelson · Phys. Rev. · 1987 · B35 · 414110.1103/PhysRevB.35.4141 ↗
10. Optical Effects in Amorphous Semiconductors
11. C.E. Michelson and J.D. Cohen, Phys. Rev. B, in press.
12. J.M. Essick and J.D. Cohen, Appl. Phys. Lett., in press.
13. Gelatos · Appl. Phys. Lett. · 1988 · 53 · 40310.1063/1.99892 ↗
14. J.M. Essick and J.D. Cohen, this volume.
15. Bar-Yam · Phys. Rev. Lett. · 1986 · 57 · 46710.1103/PhysRevLett.57.467 ↗