journal article·1993-12

Relaxation of the D center in amorphous silicon and how this accounts for the observed energy distributions of deep defects within the mobility gap

J. David Cohen, Thomas M. Leen, Fan Zhong

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (10)

Show source-provided references
1. Bar-Yam · Phys. Rev. Lett. · 1986 · 56 · 220310.1103/PhysRevLett.56.2203 ↗
2. Deane · Phys. Rev. Lett. · 1993 · 70 · 165410.1103/PhysRevLett.70.1654 ↗
3. Branz · Phys. Rev. B · 1989 · 39 · 510710.1103/PhysRevB.39.5107 ↗
4. Leen · J. Non-Cryst. Solids · 1991 · 137&138 · 31910.1016/S0022-3093(05)80120-6 ↗
5. Leen · 1990 · 192 · 707
6. Cohen · Phys. Rev. Lett. · 1992 · 69 · 335810.1103/PhysRevLett.69.3358 ↗
7. Oheda · J. Appl. Phys. · 1981 · 52 · 669310.1063/1.328619 ↗
8. Schumm · Phys. Rev. · 1989 · B39 · 531110.1103/PhysRevB.39.5311 ↗
9. Micheleson · Appl. Phys Lett. · 1985 · 47 · 41210.1063/1.96129 ↗
10. Hattori · J. Non-Cryst. Solids · 1991 · 137&138 · 36310.1016/S0022-3093(05)80131-0 ↗