Plasma deposition of aSi:H:F films from SiH2F2 and SiF4SiH4

journal article·1985-12

Yoshikazu Nakayama, Kazuo Wakimura, Seiki Takahashi, Hideki Kita, Takao Kawamura

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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OpenAlex topics: Thin-Film Transistor Technologies · Ga2O3 and related materials · Silicon Nanostructures and Photoluminescence

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Show source-provided references

1. Matsumura · 1984 · 535

2. Nakayama · Jpn. J. Appl. Phys. · 1983 · 22 · L75410.1143/JJAP.22.L754 ↗

3. Nakayama · Jpn. J. Appl. Phys. · 1982 · 21 · L60410.1143/JJAP.21.L604 ↗

4. Shimada · Jpn. J. Appl. Phys. · 1980 · 19 · L26510.1143/JJAP.19.L265 ↗

5. Kampas · J. Appl. Phys. · 1981 · 52 · 128510.1063/1.329752 ↗