journal article·1989-12

Estimates of the diffusion rate of the dominant paramagnetic defect in hydrogenated amorphous silicon

Warren Jackson, C.C Tsai, R Thompson

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Metallic Glasses and Amorphous Alloys

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References (10)

Show source-provided references
1. Pantelides · Phys. Rev. Lett. · 1987 · 58 · 134410.1103/PhysRevLett.58.1344 ↗
2. Pantelides · Phys. Rev. Lett. · 1986 · 57 · 297910.1103/PhysRevLett.57.2979 ↗
3. Stathis · Phys. Rev. B · 1988 · 37 · 657910.1103/PhysRevB.37.6579 ↗
4. Stutzmann · Phys. Rev. Lett. · 1988 · 60 · 168210.1103/PhysRevLett.60.1682 ↗
5. Thomas · Phys. Rev. B · 1978 · 18 · 305910.1103/PhysRevB.18.3059 ↗
6. Johnson · Appl. Phys. Lett. · 1985 · 46 · 78710.1063/1.95883 ↗
7. Street · Phil. Mag. · 1987 · 56 · 30510.1080/13642818708221319 ↗
8. W. B. Jackson, C. C. Tsai, and R. Thompson (to be published).
9. Pearton · Appl. Phys. A · 1987 · 43 · 15310.1007/BF00615975 ↗
10. The nature of defects and defect dynamics in amorphous silicon