journal article·1980-01

AC conduction of the heavily doped glow discharge amorphous silicon films

Shoji Nitta, Koichi Shimakawa, Shuichi Nonomura

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Electrical and Thermal Properties of Materials

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References (9)

Show source-provided references
1. A.C. conductivity in a-Si and Ge and the density of states at the Fermi level
2. Density of states in the gap of tetrahedrally bonded amorphous semiconductors10.1103/PhysRevLett.41.1755 ↗
3. A theory of a.c. conduction in chalcogenide glasses10.1080/14786437708238517 ↗
4. Defect states in a-Si10.1080/13642817808245334 ↗
5. Negative-U states in the gap in hydrogenated a-Si10.1103/PhysRevLett.41.889 ↗
6. Investigation of the density of localized states in a-Si using the field effect technique10.1016/0022-3093(76)90134-4 ↗
7. Ac conduction of GDa-Si films10.1016/0022-3093(77)90068-0 ↗
8. ac conductivity of Scandium oxide and a new hopping model for conductivity10.1103/PhysRevB.6.1572 ↗
9. Shimakawa · Phys. Rev. B · 1977 · 16 · 451910.1103/PhysRevB.16.4519 ↗