journal article·1998-05

Photoconductivity gain over 10 at a large electric field in wide gap a-Si:H

W Futako, T Kamiya, C.M Fortmann, I Shimizu

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Thin-Film Transistor Technologies · Phase-change materials and chalcogenides · Silicon Nanostructures and Photoluminescence

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (9)

Show source-provided references
1. Oda · J. Appl. Phys. · 1981 · 52 · 727510.1063/1.328714 ↗
2. Murayama · J. Appl. Phys. · 1987 · 61 · 257510.1063/1.337935 ↗
3. Guha · J. Non-Cryst. Solids · 1996 · 198–220 · 107610.1016/0022-3093(96)00047-6 ↗
4. Takasaki · Mater. Res. Soc. Symp. Proc. · 1988 · 118 · 38710.1557/PROC-118-387 ↗
5. Sawada · Appl. Phys. Lett. · 1996 · 68 · 183510.1063/1.116029 ↗
6. Yoshimi · Appl. Phys. Lett. · 1992 · 72 · 3186
7. Nakamura · Jpn. J. Appl. Phys. · 1994 · 34 · 44210.1143/JJAP.34.442 ↗
8. W. Futako, K. Yoshino, C.M. Fortmann, I. Shimizu, J. Appl. Phys., to be published.
9. H. Overhof, P. Thomas, Electronic Transport in Hydrogenated Amorphous Semiconductors, Springer Tracts in Modern Physics, Vol. 114, Springer-Verlag, New York, 1989, p. 132.10.1007/BFb0044936 ↗