Kinetics of light-induced defect creation in amorphous silicon: The constant degradation method
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Glass properties and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (11)
Show source-provided references
1. Stutzmann · Phys. Rev. B · 1985 · 32 · 2310.1103/PhysRevB.32.23 ↗
2. Redfield · Appl. Phys. Lett. · 1989 · 54 · 103710.1063/1.100790 ↗
3. Jackson · Phil. Mag. Lett. · 1989 · 59 · 10310.1080/09500838908214783 ↗
4. Kakalios · Phys. Rev. Lett · 1987 · 59 · 103710.1103/PhysRevLett.59.1037 ↗
5. Street · Phil. Mag. B · 1987 · 56 · 30510.1080/13642818708221319 ↗
6. Bube · J. Appl. Phys. · 1989 · 66 · 82010.1063/1.343503 ↗
7. Kocka · 1988 · 297
8. M. Stutzmann, J. Nunnenkamp, M. S. Brandt, A. Asano, and M. C. Rossi, this volume.
9. M. S. Brandt, M. C. Rossi, and M. Stutzmann, unpublished.
10. M. S. Brandt and M. Stutzmann, to be published.
11. Stuke · J. Non-Cryst. Solids · 1987 · 97 & 98 · 110.1016/0022-3093(87)90007-X ↗