journal article·2000-05

Image processing in a μc-Si:H p–i–n image transducer

F Sousa, J Martins, M Fernandes, A Maçarico, R Schwarz, M Vieira

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Abstract

Abstract A two-dimensional p–i–n imager based on μc-Si:H material is analysed. The basic building block for the sensor element is a transparent conductive oxide (TCO)/μc-p–i–n Si:H photodiode with front metal contacts and a TCO back contact. A scan-out process based on the photovoltage signal induced by a modulated HeNe laser is used to acquire the image. An analysis of the geometric image distortion and image restoration is given. Basic image processing algorithms are applied for image enhancement and pattern recognition.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Astronomical Observations and Instrumentation · CCD and CMOS Imaging Sensors · Thin-Film Transistor Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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