Equilibration temperature of a-Si:H and a-Ge:H from Raman measurements
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Abstract
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies
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References (14)
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1. Street · Phys Rev B · 1989 · 40 · 623610.1103/PhysRevB.40.6236 ↗
2. Schumm · Phil Mag B · 1991
3. Street · Phys Rev B · 1987 · 35 · 131610.1103/PhysRevB.35.1316 ↗
4. Stutzmann · Phil Mag B · 1989 · 60 · 53110.1080/13642818908205926 ↗
5. Skettrup · Phys Rev B · 1978 · 18 · 262210.1103/PhysRevB.18.2622 ↗
6. Tanaka · Phys Rev B · 1981 · 24 · 203810.1103/PhysRevB.24.2038 ↗
7. Singh · Phys Rev B · 1981 · 23 · 415610.1103/PhysRevB.23.4156 ↗
8. Maley · Phys Rev B · 1988 · 38 · 1061110.1103/PhysRevB.38.10611 ↗
9. Schubert · Phil Mag B · 1990 · 62 · 5910.1080/13642819008205534 ↗
10. H.-D. Mohring, R. Brüggemann, C.D. Abel, G.H. Bauer, Characterization of high quality …, this volume
11. K. Eberhardt, M. Heintze, G.H. Bauer, Thermally induced changes of conductivity …, this volume
12. Heintze · 1991
13. Mahan · Appl. Phys. Lett. · 1987 · 50 · 33510.1063/1.98192 ↗
14. McMahon · Appl Phys Lett · 1987 · 51 · 41210.1063/1.98406 ↗