Frequency-resolved drift mobility in a-Si:H
Source abstract
Abstract
The modulated photoconductivity technique as a convenient means of measuring the drift mobility of photocarriers has been applied to investigate the transport properties of a-Si:H. The results of frequency-domain measurements are accounted for by the transport model that includes carrier interactions between localized states through tunneling transitions. In addition, the effect of light soaking on the drift mobility is discussed quantitatively.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence
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References (12)
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