journal article·1983-12

Doping-induced and photo-induced modification of electron-emission rate at localized states in P-doped a-Si:H

H. Okushi, M. Miyakawa, T. Okuno, S. Yamasaki, Y. Tokumaru, K. Tanaka

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Semiconductor materials and devices

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References (8)

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1. Okushi · Phys. Rev. · 1982 · B25 · 431310.1103/PhysRevB.25.4313 ↗
2. Okushi · Phys. Rev. · 1983 · B27 · 518410.1103/PhysRevB.27.5184 ↗
3. Okushi · Appl. Phys. Lett. · 1983 · 42 · 89510.1063/1.93779 ↗
4. Okushi · Jpn. J. Appl. Phys. · 1981 · 20 · L54910.1143/JJAP.20.L549 ↗
5. Okushi · Jpn. J. Appl. Phys. · 1982 · 21 · 25910.7567/JJAPS.21S2.259 ↗
6. Okushi · J. Phys. (Paris) · 1981 · 42 · C4
7. Street · Phys. Rev. Lett. · 1982 · 49 · 118710.1103/PhysRevLett.49.1187 ↗
8. Staebler · J. Appl. Phys. · 1980 · 51 · 326210.1063/1.328084 ↗