journal article·1989-12

Deep valence-band trap defect conversion by light soaking of a-Si:H

C.E Nebel, G.H Bauer

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Phase-change materials and chalcogenides · Silicon Nanostructures and Photoluminescence

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References (9)

Show source-provided references
1. Lechner · Euro. For. New Energ. · 1988 · 101
2. Marshall · Phil. Mag. B · 1988 · 57 · 38710.1080/13642818808208511 ↗
3. Barclay · 1988 · 118 · 519
4. Kocka · 1988 · Vol 1 · 724
5. Pierz · J. Non-Cryst. Sol. · 1987 · 97&98 · 6310.1016/0022-3093(87)90014-7 ↗
6. Hirabayashi · J. Non-Cryst. Sol. · 1987 · 97&98 · 8710.1016/0022-3093(87)90020-2 ↗
7. Nebel · Phil. Mag. B · 1989 · 59 · 46310.1080/13642818908218394 ↗
8. M. Stutzmann, to be published in Phil. Mag. B
9. DenBoer · J. Non-Cryst. Sol. · 1984 · 66 · 36310.1016/0022-3093(84)90345-4 ↗