Negative conductance and sequential tunneling in amorphous silicon-silicon carbide double barrier devices
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (14)
Show source-provided references
1. Esaki · IBM J. Res. Dev. · 1970 · 14 · 6110.1147/rd.141.0061 ↗
2. Abeles · Phys. Rev. Lett. · 1983 · 51 · 200310.1103/PhysRevLett.51.2003 ↗
3. Santos · J. Non-Cryst. Solids · 1985 · 77 & 78 · 106910.1016/0022-3093(85)90842-7 ↗
4. Tiedje · J. Non-Cryst. Solids · 1985 · 77 & 78 · 103110.1016/0022-3093(85)90837-3 ↗
5. Pereyra · J. Non-Cryst. Solids · 1987 · 97 & 98 · 87110.1016/0022-3093(87)90209-2 ↗
6. Miyazaki · Phys. Rev. Lett. · 1987 · 59 · 12510.1103/PhysRevLett.59.125 ↗
7. Mott · 1979
8. Evangelisti · J. Non-Cryst. Solids · 1985 · 77 & 78 · 96910.1016/0022-3093(85)90823-3 ↗
9. Tsu · Appl. Phys. Lett. · 1973 · 22 · 56210.1063/1.1654509 ↗
10. Lampert · 1970
11. Benyuan · 1989
12. Tsu · 1985 · 433
13. Cloude · Phil. Mag. B · 1986 · 54 · L11310.1080/13642818608239026 ↗
14. Ridley · 1961 · 78 · 293