Properties of GeH4 (SiH4) plasmas for deposition of device-quality a-Ge:H (a-Si:H) material
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Abstract
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OpenAlex topics: Semiconductor materials and devices · Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence
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References (15)
Show source-provided references
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15. M.Hayashi, personal information (tentative GeH4 cross sections; uncertainty of the values about ± 30 %)