The annealing behavior of the g=2.0026 ESR line in a-Si:H
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Semiconductor materials and devices
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References (11)
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1. For a recent review of ESR work in amorphous silicon see P.C. Taylor in Semiconductors and Semimetals 21C (in press).
2. Knights · Solid State Commun. · 1977 · 22 · 13310.1016/0038-1098(77)90418-5 ↗
3. Adler · Physica · 1983 · 117B & 118B · 932
4. Morimoto · Jap. J. Appl. Phys. · 1981 · 20 · L83310.1143/JJAP.20.L833 ↗
5. Morimoto · Jap. J. Appl. Phys. · 1982 · 21 · L11910.1143/JJAP.21.L119 ↗
6. Watanabe · Jap. J. Appl. Phys. · 1982 · 21 · L61310.1143/JJAP.21.L613 ↗
7. Dersch · Phys. Status Solidi · 1981 · B105 · 26510.1002/pssb.2221050129 ↗
8. Miller · Surf. Sci. · 1971 · 24 · 63910.1016/0039-6028(71)90287-1 ↗
9. M. Stutzmann, private communication.
10. C.C. Tsai, J.C. Knights and M.J. Thompson in these proceedings.
11. Tsai · 1977 · 339