journal article·1989-12

Alloying effects on the electronic structure of a-Si1−xNx:H films prepared by a mercury-photosensitized decomposition method

M.Driss Khodja, A Le Corre, C Senemaud, A Gheorghiu, M.L Theye, B Allain, J Perrin

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Abstract

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor materials and devices · ZnO doping and properties

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References (10)

Show source-provided references
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3. Karcher · Phys. Rev. B · 1984 · 30 · 189610.1103/PhysRevB.30.1896 ↗
4. Bustarret · Thèse · 1988
5. E. Bustarret and T.A. Nguyen Tan, Phys. Rev. B (in print)
6. Rochet · Phys. Rev. · 1988 · B37 · 646810.1103/PhysRevB.37.6468 ↗
7. Robertson · Phil. Mag. B · 1981 · 44 · 21510.1080/01418638108222558 ↗
8. Ren · Phys. Rev. · 1981 · B23 · 545410.1103/PhysRevB.23.5454 ↗
9. Martin-Moreno · Phys. Rev. · 1987 · B35 · 968310.1103/PhysRevB.35.9683 ↗
10. Kurata · Jap. J. Appl. Phys. · 1981 · 20 · L81110.1143/JJAP.20.L811 ↗