journal article·1991

A-Si:H ambipolar diffusion length and effective lifetime measured by flying spot (FST) and spectral photovoltage (SPT) techniques

M. Vieira, R. Martins, E. Fortunato, F. Soares, L. Guimarães

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Semiconductor materials and interfaces

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (11)

Show source-provided references
1. Moore · Appl. Phys. Lett. · 1982 · 40 · 40310.1063/1.93118 ↗
2. Moore · J. Appl. Phys. Lett. · 1984 · 56 · 2796
3. Ritter · Appl. Phys. Lett. · 1986 · 49 · 7910.1063/1.97548 ↗
4. Ritter · J. Appl. Phys. · 1987 · 62 · 456310.1063/1.339051 ↗
5. Martins · 1990 · 975
6. Vieira · 1991
7. Moore · J. Appl. Phys. Lett. · 1983 · 40 · 40310.1063/1.93118 ↗
8. DeVore · Phys. Rev. · 1956 · 102 · 8610.1103/PhysRev.102.86 ↗
9. Martins · 1988 · 653
10. Fortunato · 1990 · 813
11. Fortunato · 1991